Samsung M378T5663QZ3-CF7 2GB vs Samsung M3 78T5663EH3-CF7 2GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 65

左右 14% 更低的延时

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 4

测试中的平均数值
更快的写入速度，GB/s

2,451.8 1,813.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

56 65
读取速度，GB/s

4,387.7 4,605.9
写入速度，GB/s

1,813.5 2,451.8
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

693 878

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology D12.2326WH.001 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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OCMEMORY OCM3200CL16D-16GBN 8GB

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AMD AE34G1601U1 4GB

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Kingston 9905703-011.A00G 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Patriot Memory (PDP Systems) PSD44G240041 4GB

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AMD R538G1601U2S 8GB

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