Samsung M378T5663QZ3-CF7 2GB vs Samsung M3 78T5663EH3-CF7 2GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 65

左右 14% 更低的延时

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 4

测试中的平均数值
更快的写入速度，GB/s

2,451.8 1,813.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

56 65
读取速度，GB/s

4,387.7 4,605.9
写入速度，GB/s

1,813.5 2,451.8
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

693 878

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905625-098.A00G 16GB

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Samsung M471B5273EB0-CK0 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Panram International Corporation R748G2133U2S 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

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Mushkin 99[2/7/4]199F 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Crucial Technology CT16G4SFD824A.M16FA 16GB

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Team Group Inc. UD5-6400 16GB

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Corsair CMT64GX4M4Z3600C18 16GB

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Kingston 9965525-140.A00LF 8GB

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G Skill Intl F4-4800C20-16GTZR 16GB

G Skill Intl F4-4800C20-16GTZR 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-2133C15-8GIS 8GB

G Skill Intl F4-2133C15-8GIS 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB