Samsung M391B5273CH0-CH9 4GB vs Avant Technology W641GU42J7240NC 8GB

总分

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分

Avant Technology W641GU42J7240NC 8GB

Avant Technology W641GU42J7240NC 8GB

差异规格评论

差异

Samsung M391B5273CH0-CH9 4GB

需要考虑的原因
Samsung M391B5273CH0-CH9 4GB

报告一个错误

Avant Technology W641GU42J7240NC 8GB

需要考虑的原因
Avant Technology W641GU42J7240NC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

14.7 13.4

测试中的平均数值
更快的写入速度，GB/s

9.4 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5273CH0-CH9 4GB

Avant Technology W641GU42J7240NC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.4 14.7
写入速度，GB/s

8.4 9.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2275 2383

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hyundai Inc AR32C16S8K2SU416R 8GB

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Samsung M391B5273CH0-CH9 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

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Micron Technology 8ATF1G64AZ-2G3H1 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3000C15-8GVKB 8GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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G Skill Intl F4-3600C16-8GTZNC 8GB