RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB

Samsung M391B5273CH0-CH9 4GB vs G Skill Intl F4-3600C17-8GTZKW 8GB

总分
star star star star star
Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

差异 规格 评论

差异

Samsung M391B5273CH0-CH9 4GB 需要考虑的原因
Samsung M391B5273CH0-CH9 4GB
报告一个错误
G Skill Intl F4-3600C17-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5273CH0-CH9 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 26
  • 读取速度，GB/s
    13.4 left arrow 17.7
  • 写入速度，GB/s
    8.4 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2275 left arrow 3547

Samsung M391B5273CH0-CH9 4GB RAM的比较

Samsung M391B5273DH0-CH9 4GB
Corsair CMR32GX4M2C3333C16 16GB

G Skill Intl F4-3600C17-8GTZKW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C15-8GTZKO 8GB
G Skill Intl F4-3200C15-8GTZKO 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMW32GX4M2D3000C16 16GB
Corsair CMW32GX4M2D3000C16 16GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Kingston 9905624-007.A00G 8GB
Kingston 9905624-007.A00G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905700-012.A00G 8GB
Kingston 9905700-012.A00G 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT25664BA1339.M8FK 2GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-2133C15-8GRS 8GB
G Skill Intl F4-2133C15-8GRS 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
内存RAM