Samsung M391B5273CH0-CH9 4GB vs Samsung M471A2K43BB1-CRC 16GB

总分

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

差异规格评论

差异

Samsung M391B5273CH0-CH9 4GB

需要考虑的原因
Samsung M391B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Samsung M471A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M471A2K43BB1-CRC 16GB

报告一个错误

更快的读取速度，GB/s

14.2 13.4

测试中的平均数值
更快的写入速度，GB/s

9.5 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5273CH0-CH9 4GB

Samsung M471A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

13.4 14.2
写入速度，GB/s

8.4 9.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2275 2470

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL32G32C16U4WL.M16FB 32GB

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G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT8G4DFS632A.M4FE 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

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Samsung M471B1G73BH0-CK0 8GB