Samsung M391B5673EH1-CH9 2GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

报告一个错误

更快的读取速度，GB/s

15.7 12.8

测试中的平均数值
更快的写入速度，GB/s

11.0 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

12.8 15.7
写入速度，GB/s

9.0 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8213.M8FH 8GB

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SK Hynix HMAA4GS6AJR8N-XN 32GB

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Kingston CBD26D4S9D8ME-16 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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G Skill Intl F4-3466C16-8GVR 8GB

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AMD R534G1601U1S-UO 4GB

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G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL10-8GBXL 8GB

G Skill Intl F3-14900CL10-8GBXL 8GB

Kingston 99U5584-004.A00LF 4GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB