Samsung M391B5673EH1-CH9 2GB vs Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

16.8 12.8

测试中的平均数值
更快的写入速度，GB/s

12.5 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

12.8 16.8
写入速度，GB/s

9.0 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2795

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-156.A00LF 2GB

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Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-2800C15-8GVSB 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT8G4DFD8213.C16FBR2 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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EVGA 16G-D4-2666-MR 4GB

EVGA 16G-D4-2666-MR 4GB

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A-DATA Technology AO1P24HC4N2-BWCS 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB