Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT8G4DFRA266.C8FJ 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Crucial Technology CT8G4DFRA266.C8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FJ 8GB

报告一个错误

更快的读取速度，GB/s

14.6 12.8

测试中的平均数值
更快的写入速度，GB/s

12.2 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

12.8 14.6
写入速度，GB/s

9.0 12.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 2915

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Apacer Technology 78.C2GFA.AF30B 8GB

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Chun Well Technology Holding Limited MD4U1636181DCW 16GB

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Essencore Limited KD48GU880-32A160T 8GB

Essencore Limited KD48GU880-32A160T 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Wilk Elektronik S.A. GR2133S464L15S/8G 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200