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Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2666C18-32GRS 32GB
比较
Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-2666C18-32GRS 32GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
G Skill Intl F4-2666C18-32GRS 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
39
左右 33% 更低的延时
需要考虑的原因
G Skill Intl F4-2666C18-32GRS 32GB
报告一个错误
更快的读取速度,GB/s
15.2
12.8
测试中的平均数值
更快的写入速度,GB/s
13.3
9.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2666C18-32GRS 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
39
读取速度,GB/s
12.8
15.2
写入速度,GB/s
9.0
13.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2143
3027
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
G Skill Intl F4-2666C18-32GRS 32GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2666C18-32GRS 32GB
G Skill Intl F3-1866C8-8GTX 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Kingston 9965433-034.A00LF 4GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Kingston 99C5316-026.A00LF 1GB
Samsung M393A2K40CB1-CRC 16GB
Mushkin 991988 (996988) 4GB
Corsair CMK128GX4M8X3600C18 16GB
Samsung M3 78T5663RZ3-CE6 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
KingSpec KingSpec 16GB
Kingston 9965516-430.A00G 16GB
Kingston 9905701-141.A00G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMU32GX4M4D3000C16 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
AMD R538G1601U2S 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Kingston KVR800D2N6/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2400C15-16GFX 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology DDR4 2800 8GB
报告一个错误
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Bug description
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