Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-2800C15-16GRKD 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时

G Skill Intl F4-2800C15-16GRKD 16GB

需要考虑的原因
G Skill Intl F4-2800C15-16GRKD 16GB

报告一个错误

更快的读取速度，GB/s

14.1 12.8

测试中的平均数值
更快的写入速度，GB/s

10.9 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2800C15-16GRKD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

12.8 14.1
写入速度，GB/s

9.0 10.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2931

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F5-6000J3636F16G 16GB

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Essencore Limited KD48GU880-32A160X 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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A-DATA Technology DQKD1A08 1GB

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Apacer Technology 78.BAGN8.40C0B 4GB

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G Skill Intl F4-3600C18-16GTRG 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Corsair CMY16GX3M4A2133C8 4GB

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Crucial Technology CT16G4DFD8213.C16FH1 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Kingston MSI24D4S7D8MB-16 16GB

Kingston MSI24D4S7D8MB-16 16GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX2133C11D3/4GX 4GB

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Samsung M3 78T6553BZ0-KCC 512MB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB