Samsung M391B5673EH1-CH9 2GB vs Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 7% 更低的延时
更快的写入速度，GB/s

9.0 7.5

测试中的平均数值

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

需要考虑的原因
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

报告一个错误

更快的读取速度，GB/s

14.4 12.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 28
读取速度，GB/s

12.8 14.4
写入速度，GB/s

9.0 7.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Nanya Technology NT4GC64C88B1NS-DI 4GB

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Apacer Technology 76.B305G.D500B 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMT32GX4M4C3000C15 8GB

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Corsair CMH128GX4M4E3200C16 32GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

Team Group Inc. UD5-6400 16GB

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Crucial Technology CT8G4SFD824A.C16FF 8GB

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Kingston 9965525-018.A00LF 4GB

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Patriot Memory (PDP Systems) 3200 C18 Series 8GB

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Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB