Samsung M391B5673EH1-CH9 2GB vs Micron Technology TEAMGROUP-UD4-2133 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

更快的读取速度，GB/s

12.8 12.6

测试中的平均数值
更快的写入速度，GB/s

9.0 5.6

测试中的平均数值

Micron Technology TEAMGROUP-UD4-2133 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-2133 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Micron Technology TEAMGROUP-UD4-2133 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

12.8 12.6
写入速度，GB/s

9.0 5.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264AC800.C16FC 4GB

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G Skill Intl F4-3200C16-8GRKB 8GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Crucial Technology CT102464BF160B-16F 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KF2933C17S4/32G 32GB

Kingston KF2933C17S4/32G 32GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Apacer Technology AQD-D4U8GN26-SE 8GB

Apacer Technology AQD-D4U8GN26-SE 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMW32GX4M4Z3200C16 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB

Wilk Elektronik S.A. GR2133S464L15/16G 16GB