Samsung M391B5673FH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Samsung M391B5673FH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 32% 更低的延时
更快的读取速度，GB/s

13.3 7.8

测试中的平均数值
更快的写入速度，GB/s

8.5 6.1

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 41
读取速度，GB/s

13.3 7.8
写入速度，GB/s

8.5 6.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2213 1512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Avant Technology W641GU67J5213N8 8GB

Avant Technology W641GU67J5213N8 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Corsair CMD64GX4M4B2800C14 16GB

Corsair CMD64GX4M4B2800C14 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CMW32GX4M2Z3600C18 16GB

Corsair CMW32GX4M2Z3600C18 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

G Skill Intl F4-4000C16-16GVK 16GB

G Skill Intl F4-4000C16-16GVK 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology CT16G4SFRA266.M16FR 16GB

Crucial Technology CT16G4SFRA266.M16FR 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905713-030.A00G 8GB

Kingston 9905713-030.A00G 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Corsair CMT64GX4M4Z3600C18 16GB

Corsair CMT64GX4M4Z3600C18 16GB