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Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB

Samsung M393B1G70BH0-CK0 8GB vs A-DATA Technology AO1P26KC8T1-BPXS 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
A-DATA Technology AO1P26KC8T1-BPXS 8GB

A-DATA Technology AO1P26KC8T1-BPXS 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 106
    左右 52% 更低的延时
  • 更快的写入速度，GB/s
    8.1 left arrow 5.6
    测试中的平均数值
A-DATA Technology AO1P26KC8T1-BPXS 8GB 需要考虑的原因
A-DATA Technology AO1P26KC8T1-BPXS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.1 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 106
  • 读取速度，GB/s
    9.8 left arrow 13.1
  • 写入速度，GB/s
    8.1 left arrow 5.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 1252

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

A-DATA Technology AO1P26KC8T1-BPXS 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston SMD4-S8G48HJ-26V 8GB
Kingston SMD4-S8G48HJ-26V 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905599-025.A00G 8GB
Kingston 9905599-025.A00G 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Crucial Technology BL16G32C16U4W.16FE 16GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK128GX4M8A2133C13 16GB
Corsair CMK128GX4M8A2133C13 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Corsair CMD32GX4M2C3200C14T 16GB
Corsair CMD32GX4M2C3200C14T 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Asgard VMA45UH-MEC1U2AW2 16GB
Asgard VMA45UH-MEC1U2AW2 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMK32GX4M4D3000C16 8GB
Corsair CMK32GX4M4D3000C16 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK16GX4M1A2400C14 16GB
Corsair CMK16GX4M1A2400C14 16GB
内存RAM