Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology BLE8G4D26AFEA.16FAD 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

需要考虑的原因
Crucial Technology BLE8G4D26AFEA.16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 51

左右 -55% 更低的延时
更快的读取速度，GB/s

16.4 9.8

测试中的平均数值
更快的写入速度，GB/s

12.1 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 33
读取速度，GB/s

9.8 16.4
写入速度，GB/s

8.1 12.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2208 2988

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Mushkin MR[A/B]4U320LLLM16G 16GB

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AMD AE34G1601U1 4GB

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Patriot Memory (PDP Systems) 4133 C19 Series 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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G Skill Intl F4-3000C16-8GVSB 8GB

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Corsair CMH32GX4M4E3200C16 8GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Crucial Technology CT102464BF160B.C16 8GB

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G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

KingSpec KingSpec 16GB

KingSpec KingSpec 16GB