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Samsung M393B1G70BH0-CK0 8GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB

Samsung M393B1G70BH0-CK0 8GB vs ISD Technology Limited IM44GU48A30-GIIHM 4GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
ISD Technology Limited IM44GU48A30-GIIHM 4GB 需要考虑的原因
ISD Technology Limited IM44GU48A30-GIIHM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 51
    左右 -122% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 23
  • 读取速度，GB/s
    9.8 left arrow 14.9
  • 写入速度，GB/s
    8.1 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2318

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Avant Technology J641GU42J9266ND 8GB
Avant Technology J641GU42J9266ND 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F4-2666C18-8GRS 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Hewlett-Packard 7EH74AA#ABC 8GB
Hewlett-Packard 7EH74AA#ABC 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Kingston KHX3000C16D4/16GX 16GB
Kingston KHX3000C16D4/16GX 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Apacer Technology 78.C1GMM.AUW0C 8GB
内存RAM