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Samsung M393B1G70BH0-CK0 8GB
Kingston HX426C16FB2/8-SP 8GB

Samsung M393B1G70BH0-CK0 8GB vs Kingston HX426C16FB2/8-SP 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 7.8
    测试中的平均数值
Kingston HX426C16FB2/8-SP 8GB 需要考虑的原因
Kingston HX426C16FB2/8-SP 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    50 left arrow 51
    左右 -2% 更低的延时
  • 更快的读取速度，GB/s
    10 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Kingston HX426C16FB2/8-SP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 50
  • 读取速度，GB/s
    9.8 left arrow 10.0
  • 写入速度，GB/s
    8.1 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2159

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Kingston HX426C16FB2/8-SP 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Apacer Technology 78.A1GC6.9H10C 2GB
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内存RAM
Kingston 99U5474-037.A00LF 4GB
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Kingston 99U5702-089.A00G 8GB
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Micron Technology 4ATF1G64HZ-3G2E1 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
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Smart Modular SMU4WEC8C1K0464FCG 8GB
内存RAM