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Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB

Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology CT8G4SFS8266.C8FD1 8GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
Crucial Technology CT8G4SFS8266.C8FD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8266.C8FD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 49
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 35
  • 读取速度，GB/s
    10.2 left arrow 16.4
  • 写入速度，GB/s
    8.1 left arrow 10.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 2660

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Apacer Technology 78.B1GET.AU00C 4GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Corsair CMK192GX4M12P3200C16 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
Kingston 9965516-112.A00LF 16GB
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Corsair CMK32GX4M4A2666C15 8GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C15-16GVK 16GB
G Skill Intl F4-2666C15-16GVK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
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Kingston 9905743-043.A00G 16GB
内存RAM
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内存RAM
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内存RAM
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Samsung M471B5273DH0-CK0 4GB
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内存RAM
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Samsung M4 70T5663CZ3-CE6 2GB
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G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM