Samsung M393B1K70CH0-YH9 8GB vs A-DATA Technology DDR4 4133 2OZ 8GB

总分

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分

A-DATA Technology DDR4 4133 2OZ 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

差异规格评论

差异

Samsung M393B1K70CH0-YH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB

报告一个错误

A-DATA Technology DDR4 4133 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 4133 2OZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 49

左右 -113% 更低的延时
更快的读取速度，GB/s

18.5 10.1

测试中的平均数值
更快的写入速度，GB/s

17.8 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-YH9 8GB

A-DATA Technology DDR4 4133 2OZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 23
读取速度，GB/s

10.1 18.5
写入速度，GB/s

7.8 17.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 3905

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M393B1K70CH0-YH9 8GB

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Samsung M471B5673FH0-CH9 2GB

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Corsair CMK16GX4M2B3000C15 8GB

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Lexar Co Limited LD4BU008G-H3200ULH 8GB

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Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

SK Hynix HMA82GU6AFR8N-TF 16GB

SK Hynix HMA82GU6AFR8N-TF 16GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Kingston 99U5474-010.A00LF 2GB

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Samsung M471A2K43EB1-CWE 16GB