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Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Samsung M393B1K70CH0-YH9 8GB vs Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

总分
star star star star star
Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分
star star star star star
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

差异 规格 评论

差异

Samsung M393B1K70CH0-YH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 69
    左右 29% 更低的延时
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 69
  • 读取速度，GB/s
    10.1 left arrow 16.1
  • 写入速度，GB/s
    7.8 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 1794

Samsung M393B1K70CH0-YH9 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB RAM的比较

Kingston 9965669-018.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK32GX4M4K4133C19 8GB
Corsair CMK32GX4M4K4133C19 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905678-139.A00G 8GB
Kingston 9905678-139.A00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW32GX4M4C3600C18 8GB
Corsair CMW32GX4M4C3600C18 8GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
SK Hynix GKE800SO102408-2400 8GB
SK Hynix GKE800SO102408-2400 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMSX32GX4M2A3000C18 16GB
Corsair CMSX32GX4M2A3000C18 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4000C18-8GTZR 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Kingmax Semiconductor KSCE88F-B8MO5 2GB
G Skill Intl F4-2666C18-16GRS 16GB
G Skill Intl F4-2666C18-16GRS 16GB
内存RAM