RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B1K70CH0-YH9 8GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Samsung M393B1K70CH0-YH9 8GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

总分
star star star star star
Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

总分
star star star star star
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

差异 规格 评论

差异

Samsung M393B1K70CH0-YH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-YH9 8GB
报告一个错误
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB 需要考虑的原因
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 49
    左右 -63% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-YH9 8GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 30
  • 读取速度，GB/s
    10.1 left arrow 16.0
  • 写入速度，GB/s
    7.8 left arrow 10.6
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 3026

Samsung M393B1K70CH0-YH9 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M392B1K70CM0-YH9 8GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX3466C17D4/16GX 16GB
Kingston KHX3466C17D4/16GX 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CM4X4GD3000C16K2 4GB
Corsair CM4X4GD3000C16K2 4GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
Crucial Technology BLS8G4D240FSEK.8FBR 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMR32GX4M2C3000C15 16GB
Corsair CMR32GX4M2C3000C15 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Panram International Corporation PUD42400C154GNJW 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX2933C17S4/8G 8GB
Kingston KHX2933C17S4/8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX2133C13S4/4G 4GB
Kingston KHX2133C13S4/4G 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CB4GU2400.M8E 4GB
Crucial Technology CB4GU2400.M8E 4GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM