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Samsung M393B1K70QB0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
比较
Samsung M393B1K70QB0-CK0 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
总分
Samsung M393B1K70QB0-CK0 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
47
左右 -96% 更低的延时
更快的读取速度,GB/s
15.6
10.4
测试中的平均数值
更快的写入速度,GB/s
12.1
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B1K70QB0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
47
24
读取速度,GB/s
10.4
15.6
写入速度,GB/s
7.8
12.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2169
2852
Samsung M393B1K70QB0-CK0 8GB RAM的比较
V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KHX2133C15S4/8G 8GB
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SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2933C16-16GFX 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2666C18-32GTZN 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.C2GF6.AU20B 8GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA425S6BJR6N-UH 2GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3200C16-16GVK 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology BLS4G4D240FSB.8FAR 4GB
报告一个错误
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