Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-2133C15-8GSQ 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-2133C15-8GSQ 8GB

G Skill Intl F4-2133C15-8GSQ 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-2133C15-8GSQ 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GSQ 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 54

左右 -125% 更低的延时
更快的读取速度，GB/s

15.7 9.2

测试中的平均数值
更快的写入速度，GB/s

12.0 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2133C15-8GSQ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 24
读取速度，GB/s

9.2 15.7
写入速度，GB/s

8.1 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2618

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-2666C18-32GVK 32GB

G Skill Intl F4-2666C18-32GVK 32GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston MSI24D4U7D8MH-16 16GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C15-8GTZRX 8GB

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Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905624-007.A00G 8GB

Kingston 9905624-007.A00G 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB