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Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2800C15-8GTZB 8GB

Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-2800C15-8GTZB 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
G Skill Intl F4-2800C15-8GTZB 8GB 需要考虑的原因
G Skill Intl F4-2800C15-8GTZB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 54
    左右 -93% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2800C15-8GTZB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 28
  • 读取速度，GB/s
    9.2 left arrow 18.0
  • 写入速度，GB/s
    8.1 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3188

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

G Skill Intl F4-2800C15-8GTZB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Avant Technology J644GU44J9266NQ 32GB
Avant Technology J644GU44J9266NQ 32GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4266C19-8GTRG 8GB
G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KVR24N17S8/4 4GB
Kingston KVR24N17S8/4 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology ILG8GS2400A 8GB
Micron Technology ILG8GS2400A 8GB
内存RAM
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C16-4GRB 4GB
G Skill Intl F4-3200C16-4GRB 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
内存RAM