Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-3200C18-8GRS 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-3200C18-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C18-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 54

左右 -86% 更低的延时
更快的读取速度，GB/s

17.2 9.2

测试中的平均数值
更快的写入速度，GB/s

13.4 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3200C18-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 29
读取速度，GB/s

9.2 17.2
写入速度，GB/s

8.1 13.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 3199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Corsair CMD16GX4M2B3200C14 8GB

Corsair CMD16GX4M2B3200C14 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

Kingston RB16D3LS1KBG/4G 4GB

Kingston RB16D3LS1KBG/4G 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB