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Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Samsung M393B2G70BH0-CK0 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
  • 更快的读取速度，GB/s
    9.2 left arrow 9.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 6.9
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 54
    左右 -35% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 40
  • 读取速度，GB/s
    9.2 left arrow 9.1
  • 写入速度，GB/s
    8.1 left arrow 6.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2031

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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