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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 16ATF2G64AZ-2G6D1 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Micron Technology 16ATF2G64AZ-2G6D1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6D1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 54
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 26
  • 读取速度，GB/s
    9.2 left arrow 14.2
  • 写入速度，GB/s
    8.1 left arrow 9.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2890

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-8GTZ 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMK16GX4M2B3466C16 8GB
Corsair CMK16GX4M2B3466C16 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Apacer Technology 78.B1GN3.AZ32B 4GB
Apacer Technology 78.B1GN3.AZ32B 4GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3200C14-16GTZSK 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM