Samsung M393B2G70BH0-CK0 16GB vs Teikon TMA451S6AFR8N-TFSC 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Teikon TMA451S6AFR8N-TFSC 4GB

Teikon TMA451S6AFR8N-TFSC 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Teikon TMA451S6AFR8N-TFSC 4GB

需要考虑的原因
Teikon TMA451S6AFR8N-TFSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 54

左右 -74% 更低的延时
更快的读取速度，GB/s

14.6 9.2

测试中的平均数值
更快的写入速度，GB/s

11.5 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Teikon TMA451S6AFR8N-TFSC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 31
读取速度，GB/s

9.2 14.6
写入速度，GB/s

8.1 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905630-025.A00G 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Teikon TMA451S6AFR8N-TFSC 4GB

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Qimonda 72T128420EFA3SB2 1GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Apacer Technology 78.C1GQB.4032B 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Essencore Limited KD48GS481-26N1600 8GB

Essencore Limited KD48GS481-26N1600 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Crucial Technology CT16G4DFRA32A.C8FB 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

Samsung 36HTF51272PZ-800H1 4GB

Samsung 36HTF51272PZ-800H1 4GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB