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Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Samsung M393B2G70BH0-CK0 16GB vs Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB 需要考虑的原因
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 54
    左右 -184% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 19
  • 读取速度，GB/s
    9.2 left arrow 19.4
  • 写入速度，GB/s
    8.1 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3290

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB RAM的比较

Kingston 9965525-140.A00LF 8GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M393B2G70BH0-CK0 16GB
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G Skill Intl F4-2400C15-4GRR 4GB
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内存RAM
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Nanya Technology NT512T64U88B0BY-3C 512MB
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G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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SK Hynix HMA41GU6AFR8N-TF 8GB
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