RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B5170EH1-CH9 4GB
A-DATA Technology DDR4 3600 2OZ 8GB

Samsung M393B5170EH1-CH9 4GB vs A-DATA Technology DDR4 3600 2OZ 8GB

总分
star star star star star
Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分
star star star star star
A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

差异 规格 评论

差异

Samsung M393B5170EH1-CH9 4GB 需要考虑的原因
Samsung M393B5170EH1-CH9 4GB
报告一个错误
A-DATA Technology DDR4 3600 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 3600 2OZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 51
    左右 -104% 更低的延时
  • 更快的读取速度，GB/s
    19 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 7.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170EH1-CH9 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 25
  • 读取速度，GB/s
    10.2 left arrow 19.0
  • 写入速度，GB/s
    7.6 left arrow 14.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2049 left arrow 3683

Samsung M393B5170EH1-CH9 4GB RAM的比较

Corsair CMT8GX3M2A1866C9 4GB
G Skill Intl F4-2133C15-16GRS 16GB

A-DATA Technology DDR4 3600 2OZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3200C16-4GVKB 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-4000C17-8GVKB 8GB
G Skill Intl F4-4000C17-8GVKB 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Corsair CMSO32GX4M2A2133C15 16GB
Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston KHX2666C15/8G 8GB
Kingston KHX2666C15/8G 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Avant Technology J642GU42J7240NF 16GB
Avant Technology J642GU42J7240NF 16GB
内存RAM
Kingston 9905702-017.A00G 8GB
Kingston 9905702-017.A00G 8GB
Corsair CMK16GX4M2A2666C16 8GB
Corsair CMK16GX4M2A2666C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-2133C15-8GNS 8GB
G Skill Intl F4-2133C15-8GNS 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
内存RAM
Strontium SRT8G86U1-P9H 8GB
Strontium SRT8G86U1-P9H 8GB
Corsair CMZ16GX3M2A1600C9 8GB
Corsair CMZ16GX3M2A1600C9 8GB
内存RAM