Samsung M393B5170EH1-CH9 4GB vs Crucial Technology CT8G4DFD824A.C16FDD2 8GB

总分

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

差异规格评论

差异

Samsung M393B5170EH1-CH9 4GB

需要考虑的原因
Samsung M393B5170EH1-CH9 4GB

报告一个错误

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FDD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 51

左右 -82% 更低的延时
更快的读取速度，GB/s

17.6 10.2

测试中的平均数值
更快的写入速度，GB/s

14.1 7.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170EH1-CH9 4GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 28
读取速度，GB/s

10.2 17.6
写入速度，GB/s

7.6 14.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2049 3236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFD824A.M16FD 16GB

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Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMU16GX4M2A2400C16 8GB

Corsair CMU16GX4M2A2400C16 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

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G Skill Intl F4-3200C14-8GTZKW 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB