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Samsung M393B5170FH0-CK0 4GB
Corsair CMY16GX3M2A1866C 8GB

Samsung M393B5170FH0-CK0 4GB vs Corsair CMY16GX3M2A1866C 8GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Corsair CMY16GX3M2A1866C 8GB

Corsair CMY16GX3M2A1866C 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 67
    左右 60% 更低的延时
  • 更快的读取速度，GB/s
    11.8 left arrow 6.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.3 left arrow 5.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Corsair CMY16GX3M2A1866C 8GB 需要考虑的原因
Corsair CMY16GX3M2A1866C 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Corsair CMY16GX3M2A1866C 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 67
  • 读取速度，GB/s
    11.8 left arrow 6.7
  • 写入速度，GB/s
    7.3 left arrow 5.3
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC3-10600, 1.5V, CAS Supported: 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 1401

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Corsair CMY16GX3M2A1866C 8GB RAM的比较

Mushkin MRA4S266GHHF32G 32GB
Kingston ACR24D4U7S8MB-8 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F3-1333C9-4GIS 4GB
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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
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内存RAM
Samsung M395T2863QZ4-CF76 1GB
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内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
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内存RAM
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内存RAM
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AMD R5316G1609U2K 8GB
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Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
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Kingston KHX1600C9D3/4G 4GB
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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-3600C16-8GTZKK 8GB
Kingston 9905624-019.A00G 8GB
Kingston 9905624-019.A00G 8GB
内存RAM