Samsung M393B5170FH0-CK0 4GB vs Crucial Technology BLT8G4D30AETA.K16FD 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Crucial Technology BLT8G4D30AETA.K16FD 8GB

需要考虑的原因
Crucial Technology BLT8G4D30AETA.K16FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 27

左右 -59% 更低的延时
更快的读取速度，GB/s

20.8 11.8

测试中的平均数值
更快的写入速度，GB/s

16.8 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 17
读取速度，GB/s

11.8 20.8
写入速度，GB/s

7.3 16.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 3623

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

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Kingston 9965589-026.D00G 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Corsair CMD16GX4M2B3000C15 8GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB