Samsung M393B5170FH0-CK0 4GB vs Essencore Limited IM44GU48N26-GIIHA0 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Essencore Limited IM44GU48N26-GIIHA0 4GB

需要考虑的原因
Essencore Limited IM44GU48N26-GIIHA0 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

16.7 11.8

测试中的平均数值
更快的写入速度，GB/s

10.7 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

11.8 16.7
写入速度，GB/s

7.3 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2261

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4133C19-8GTZSWF 8GB

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Crucial Technology BLS8G4S240FSDK.8FBD 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Corsair CMD32GX4M2C3466C16W 16GB

Corsair CMD32GX4M2C3466C16W 16GB

Hexon Technology Pte Ltd HEXON 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB