Samsung M393B5170FH0-CK0 4GB vs Kingston 9965596-016.B01G 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Kingston 9965596-016.B01G 8GB

Kingston 9965596-016.B01G 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时
更快的读取速度，GB/s

11.8 9.5

测试中的平均数值
更快的写入速度，GB/s

7.3 6.1

测试中的平均数值

Kingston 9965596-016.B01G 8GB

需要考虑的原因
Kingston 9965596-016.B01G 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Kingston 9965596-016.B01G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

11.8 9.5
写入速度，GB/s

7.3 6.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 1853

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD16GX3M2A1866C9 8GB

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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Samsung M471A1G43DB0-0-B 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston HX432C15PB3/16 16GB

Kingston HX432C15PB3/16 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-3200C16-8GFX 8GB

G Skill Intl F4-3200C16-8GFX 8GB

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Samsung M395T2863QZ4-CF76 1GB

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB