Samsung M393B5170FH0-CK0 4GB vs Micron Technology CT4G4DFS8213.8FA11 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Micron Technology CT4G4DFS8213.8FA11 4GB

需要考虑的原因
Micron Technology CT4G4DFS8213.8FA11 4GB

报告一个错误

更快的读取速度，GB/s

15 11.8

测试中的平均数值
更快的写入速度，GB/s

12.0 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

11.8 15.0
写入速度，GB/s

7.3 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 2654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C15-8GTZR 8GB

G Skill Intl F4-2400C15-8GTZR 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Corsair CMW16GX4M2Z2933C16 8GB

Corsair CMW16GX4M2Z2933C16 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB