Samsung M393B5170FH0-CK0 4GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

报告一个错误

更快的读取速度，GB/s

15.9 11.8

测试中的平均数值
更快的写入速度，GB/s

10.7 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

11.8 15.9
写入速度，GB/s

7.3 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 2846

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9965669-032.A00G 16GB

Kingston 9965669-032.A00G 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F5-5600U3636C16G 16GB

G Skill Intl F5-5600U3636C16G 16GB

G Skill Intl F5-5600U3636C16G 16GB

G Skill Intl F5-5600U3636C16G 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMK32GX4M4C3000C16 8GB

Corsair CMK32GX4M4C3000C16 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Corsair CMT32GX4M2Z3600C18 16GB

Corsair CMT32GX4M2Z3600C18 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB