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Samsung M393B5170FH0-CK0 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Samsung M393B5170FH0-CK0 4GB vs Wilk Elektronik S.A. GR3200S464L22/16G 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 46
    左右 41% 更低的延时
Wilk Elektronik S.A. GR3200S464L22/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 46
  • 读取速度，GB/s
    11.8 left arrow 16.6
  • 写入速度，GB/s
    7.3 left arrow 15.4
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3045

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2B4266C19 8GB
Corsair CMK16GX4M2B4266C19 8GB
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Corsair CMK8GX4M2C3000C16 4GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMR64GX4M4A2666C16 16GB
Corsair CMR64GX4M4A2666C16 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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Apacer Technology 78.DAGQ7.40B0B 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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Corsair CMK16GX4M2L3000C15 8GB
Corsair CMK16GX4M2L3000C15 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M4B3733C17 8GB
Corsair CMK32GX4M4B3733C17 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD16GX4M4B2400C10 4GB
Corsair CMD16GX4M4B2400C10 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
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G Skill Intl F3-2666C12-8GTXD 8GB
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Samsung M386A4K40BB0-CRC 32GB
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