Samsung M393B5270CH0-CH9 4GB vs Essencore Limited KD48GU881-26N190D 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Essencore Limited KD48GU881-26N190D 8GB

Essencore Limited KD48GU881-26N190D 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Essencore Limited KD48GU881-26N190D 8GB

需要考虑的原因
Essencore Limited KD48GU881-26N190D 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 42

左右 -17% 更低的延时
更快的读取速度，GB/s

16.5 10.6

测试中的平均数值
更快的写入速度，GB/s

10.6 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Essencore Limited KD48GU881-26N190D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 36
读取速度，GB/s

10.6 16.5
写入速度，GB/s

9.0 10.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 2899

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Crucial Technology BLS16G4D240FSB.16FD 16GB

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Kingston 9905403-437.A01LF 4GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Crucial Technology CT102464BF160B.C16 8GB

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Corsair CMSX8GX4M1A2666C18 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Panram International Corporation W4U2400PS-8G 8GB

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G Skill Intl F4-2133C15-8GRS 8GB

G Skill Intl F4-2133C15-8GRS 8GB