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Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLT16G4D26BFT4.C16FD 16GB

总分
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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 12.7
    测试中的平均数值
Crucial Technology BLT16G4D26BFT4.C16FD 16GB 需要考虑的原因
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 104
    左右 -160% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 40
  • 读取速度，GB/s
    3,192.0 left arrow 15.4
  • 写入速度，GB/s
    2,404.5 left arrow 12.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2981

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B2G70DB0-CMA 16GB
Samsung M393B2G70DB0-CMA 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston HP32D4U8S8ME-8XR 8GB
Kingston HP32D4U8S8ME-8XR 8GB
内存RAM
Kingston 9905702-120.A00G 8GB
Kingston 9905702-120.A00G 8GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Avant Technology J641GU42J9266NL 8GB
Avant Technology J641GU42J9266NL 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905713-019.A00G 4GB
Kingston 9905713-019.A00G 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Maxsun MSD416G26Q3 16GB
Maxsun MSD416G26Q3 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
内存RAM