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Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology CT16G4SFS832A.M8FB 16GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Crucial Technology CT16G4SFS832A.M8FB 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
17
测试中的平均数值
更快的写入速度,GB/s
2,404.5
14.2
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4SFS832A.M8FB 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
104
左右 -271% 更低的延时
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
28
读取速度,GB/s
3,192.0
17.0
写入速度,GB/s
2,404.5
14.2
内存带宽,mbps
6400
25600
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
786
3525
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology CT16G4SFS832A.M8FB 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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PNY Electronics PNY 2GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
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Kingston 9905678-173.A00G 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
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Kingmax Semiconductor KLDD48F-B8KU5 1GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
报告一个错误
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Bug description
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