Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology CT8G4SFD824A.C16FF 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.2

测试中的平均数值

Crucial Technology CT8G4SFD824A.C16FF 8GB

需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FF 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 104

左右 -259% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 29
读取速度，GB/s

3,192.0 16.1
写入速度，GB/s

2,404.5 11.2
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2916

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology VDQVE1B16 2GB

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EVGA 16G-D4-2800-MR 4GB

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology CT8G4SFD824A.C16FF 8GB

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Micron Technology 16ATF2G64AZ-3G2J1 16GB

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A-DATA Technology DQVE1908 512MB

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Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3200C15-16GTZ 16GB

G Skill Intl F4-3200C15-16GTZ 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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