Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

报告一个错误

低于PassMark测试中的延时，ns

37 104

左右 -181% 更低的延时
更快的读取速度，GB/s

8.8 3

测试中的平均数值
更快的写入速度，GB/s

5.0 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 37
读取速度，GB/s

3,192.0 8.8
写入速度，GB/s

2,404.5 5.0
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMW64GX4M4D3600C18 16GB

Corsair CMW64GX4M4D3600C18 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston HP32D4U8S8ME-8X 8GB

Kingston HP32D4U8S8ME-8X 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Apacer Technology 78.C2GFA.AF30B 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Samsung M391A2K43BB1-CTD 16GB

Samsung M391A2K43BB1-CTD 16GB