Samsung M395T2863QZ4-CF76 1GB vs Kingston 9905678-139.A00G 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 13.2

测试中的平均数值

Kingston 9905678-139.A00G 8GB

需要考虑的原因
Kingston 9905678-139.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 104

左右 -285% 更低的延时
更快的写入速度，GB/s

8.2 2,404.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kingston 9905678-139.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 27
读取速度，GB/s

3,192.0 13.2
写入速度，GB/s

2,404.5 8.2
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD128GX4M8A2666C15 16GB

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Crucial Technology BLS4G4D240FSA.8FAR 4GB

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Samsung M393B1K70CHD-CH9 8GB

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Kingston KKN2NM-MIE 4GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Samsung M471A5244CB0-CWE 4GB

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Corsair CMT32GX4M4K3600C16 8GB

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Samsung M378A2G43BB3-CWE 16GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMT32GX4M4K4000C19 8GB

Corsair CMT32GX4M4K4000C19 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Transcend Information TS2GLH64V1B 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB