Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 18ASF2G72PDZ-2G3B1 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

57 104

左右 -82% 更低的延时
更快的读取速度，GB/s

9.5 3

测试中的平均数值
更快的写入速度，GB/s

7.4 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 57
读取速度，GB/s

3,192.0 9.5
写入速度，GB/s

2,404.5 7.4
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-YK0 16GB

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Corsair CMX8GX3M2A2000C9 4GB

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Corsair CMK32GX4M2A2400C14 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Samsung M378B5773DH0-CH9 2GB

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Crucial Technology CT4G4DFS8266.M8FE 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-3200C16-8GTZR 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB