Samsung M395T2863QZ4-CF76 1GB vs V-GEN D4H4GL26A8TS5 4GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.2

测试中的平均数值

V-GEN D4H4GL26A8TS5 4GB

需要考虑的原因
V-GEN D4H4GL26A8TS5 4GB

报告一个错误

低于PassMark测试中的延时，ns

67 104

左右 -55% 更低的延时
更快的写入速度，GB/s

8.3 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

V-GEN D4H4GL26A8TS5 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 67
读取速度，GB/s

3,192.0 16.2
写入速度，GB/s

2,404.5 8.3
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 1798

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M471A1K43CB1-CRC 8GB