Samsung M4 70T2864QZ3-CE6 1GB vs Crucial Technology BLS8G4D26BFSC.16FE 8GB

总分

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB

报告一个错误

低于PassMark测试中的延时，ns

65 66

左右 2% 更低的延时
更快的读取速度，GB/s

3 16.1

测试中的平均数值

Crucial Technology BLS8G4D26BFSC.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FE 8GB

报告一个错误

更快的写入速度，GB/s

8.3 1,574.4

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CE6 1GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 66
读取速度，GB/s

3,858.9 16.1
写入速度，GB/s

1,574.4 8.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

607 1810

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 991586 2GB

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Kingston 9965525-018.A00LF 4GB

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Ramsta Ramsta-2400Mhz-8G 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Corsair CMU16GX4M2C3200C16 8GB

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AMD R538G1601U2S 8GB

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Apacer Technology 78.CAGP7.AZ20B 8GB

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Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMW128GX4M8X3600C18 16GB

Corsair CMW128GX4M8X3600C18 16GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

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Crucial Technology CT16G4SFD8213.C16FAD 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB