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Samsung M4 70T2864QZ3-CF7 1GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
比较
Samsung M4 70T2864QZ3-CF7 1GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
总分
Samsung M4 70T2864QZ3-CF7 1GB
总分
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
22.8
测试中的平均数值
更快的写入速度,GB/s
2,201.1
16.9
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
74
左右 -155% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
74
29
读取速度,GB/s
4,178.4
22.8
写入速度,GB/s
2,201.1
16.9
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
508
3792
Samsung M4 70T2864QZ3-CF7 1GB RAM的比较
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M386A8K40CM2-CRC 64GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2400C17-4GFT 4GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2400C17-16GSXF 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M471B1G73QH0-YK0 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Ramsta Ramsta-2400Mhz-8G 8GB
Kingston 9965516-430.A00G 16GB
InnoDisk Corporation 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4400C19-16GTZR 16GB
报告一个错误
×
Bug description
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