Samsung M4 70T2864QZ3-CF7 1GB vs Corsair CMR16GX4M2Z2933C16 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Corsair CMR16GX4M2Z2933C16 8GB

Corsair CMR16GX4M2Z2933C16 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值

Corsair CMR16GX4M2Z2933C16 8GB

需要考虑的原因
Corsair CMR16GX4M2Z2933C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

66 74

左右 -12% 更低的延时
更快的写入速度，GB/s

8.5 2,201.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMR16GX4M2Z2933C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 66
读取速度，GB/s

4,178.4 17.0
写入速度，GB/s

2,201.1 8.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

508 2063

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Crucial Technology BLS8G4D240FSE.16FAR 8GB

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Samsung M393B2G70BH0-YK0 16GB

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G Skill Intl F4-3200C16-16GSXWB 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Apacer Technology 78.C2GFK.AR20B 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Ramsta Ramsta-2400Mhz-4G 4GB

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Team Group Inc. Team-Elite-1333 4GB

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Crucial Technology CT16G4SFRA32A.C16FJ 16GB

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Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

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Samsung M471B1G73DB0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

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G Skill Intl F4-3000C16-8GVRB 8GB

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Kingston KHX1866C10D3/8GX 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB