Samsung M4 70T2864QZ3-CF7 1GB vs G Skill Intl F4-3333C16-16GTZSW 16GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

G Skill Intl F4-3333C16-16GTZSW 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12.6

测试中的平均数值

G Skill Intl F4-3333C16-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 74

左右 -147% 更低的延时
更快的写入速度，GB/s

8.8 2,201.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3333C16-16GTZSW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 30
读取速度，GB/s

4,178.4 12.6
写入速度，GB/s

2,201.1 8.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 2659

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Mushkin 99[2/7/4]205[F/T] 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB