Samsung M4 70T2864QZ3-CF7 1GB vs G Skill Intl F4-3333C16-4GRRD 4GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

G Skill Intl F4-3333C16-4GRRD 4GB

G Skill Intl F4-3333C16-4GRRD 4GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值
更快的写入速度，GB/s

2,201.1 10.5

测试中的平均数值

G Skill Intl F4-3333C16-4GRRD 4GB

需要考虑的原因
G Skill Intl F4-3333C16-4GRRD 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 74

左右 -95% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3333C16-4GRRD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 38
读取速度，GB/s

4,178.4 14.5
写入速度，GB/s

2,201.1 10.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 3017

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston 9905704-007.A00G 4GB

Kingston 9905704-007.A00G 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-3333C16-4GRRD 4GB

G Skill Intl F4-3333C16-4GRRD 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston KHX2666C15/8G 8GB

Kingston KHX2666C15/8G 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Crucial Technology BLS16G4D30AESE.M16FE 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Kingston KHX2400C12D4/8GX 8GB

Kingston KHX2400C12D4/8GX 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Corsair CMK32GX4M1D3000C16 32GB

Corsair CMK32GX4M1D3000C16 32GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMK32GX4M1D3000C16 32GB

Corsair CMK32GX4M1D3000C16 32GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Kingston 9905625-029.A00G 8GB

Kingston 9905625-029.A00G 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB